The wafer-scale 2D semiconductor platform powering the next generation of AI chips

We enable foundries to scale advanced nodes beyond silicon for ultra-low-power compute.

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Beyond silicon

Next-generation AI infrastructure demands unprecedented transistor density without compromising energy efficiency.

As silicon approaches its scaling limit, foundries face a critical bottleneck:

The industry lacks the production tools to grow 2D materials on standard 12-inch wafers at commercially viable yields.

A 300 mm wafer fab production floor

North Star™

Purpose-built for
wafer-scale 2D TMD
growth.

North Star cold-wall CVD system with process chamber revealed

Our full-stack platform replaces legacy silicon channels with TMDs at the core of each transistor – atomically thin crystals that flawlessly conduct electricity at the sub-nanometer scale.

Precursor delivery lines glowing inside the North Star process chamber

Engineered Precursor Delivery

Precise vapor-phase delivery for stable chemistry and repeatable process windows.

Multi-channel showerhead heating during a growth cycle

Intermediate-Reaction Showerhead

Multi-channel thermal control enables uniform precursor reactions and wafer-scale distribution.

A 300 mm wafer on the North Star transfer stage

Foundry-Compatible Wafer Handling

Automated wafer transfer designed to integrate with industry-standard fab workflows.

North Star™

  1. Purpose-built for wafer-scale 2D TMD growth.

    Our full-stack platform replaces legacy silicon channels with TMDs at the core of each transistor – atomically thin crystals that flawlessly conduct electricity at the sub-nanometer scale.

  2. Engineered Precursor Delivery

    Precise vapor-phase delivery for stable chemistry and repeatable process windows.

  3. Intermediate-Reaction Showerhead

    Multi-channel thermal control enables uniform precursor reactions and wafer-scale distribution.

  4. Foundry-Compatible Wafer Handling

    Automated wafer transfer designed to integrate with industry-standard fab workflows.

North Star cold-wall CVD system with process chamber revealed
Precursor delivery lines glowing inside the North Star process chamber
Multi-channel showerhead heating during a growth cycle
A 300 mm wafer on the North Star transfer stage

Transistors built for the Angstrom era.

Up to

100×

Lower Defect Density

Eliminates micro-voids and interface flaws at atomic scales, unlocking the high manufacturing yields required for 300mm wafers.

Up to

75%

Less Switching Power

Delivers perfect gate control and low-leakage current, allowing AI chips to complete more compute operations with the same energy budget.

Over

2×

Smaller Gate Length

Reduces transistor channel length from using atomically thin 2D materials, enabling continued scaling beyond the sub-1 nm node.

To change what’s possible, we have to question the limits we’ve accepted.

This belief continually drives Dr. Lance Li, Co-founder & Chief Scientist of Nexstrom, and one of the earliest pioneers of 2D material growth.

From being among the first to grow single-crystal MoS₂ since 2012, to leading corporate research at TSMC, Lance has spent his career pushing the boundaries of post-silicon electronics.

His deep expertise in materials science and atomic-layer chemistry, coupled with the team’s experiences in hardware design and semiconductor integration, anchors Nexstrom’s mission: To develop wafer-scale, CMOS-compatible 2D platforms for the next generation of computing.

For Nexstrom, the Angstrom Era isn’t a theory. It’s underway — and we are building the foundation to lead it.

Dr. Lance LiCo-founder & Chief Scientist, Nexstrom
Dr. Lance Li inspecting the growth chamber of Nexstrom’s CVD platform

Timeline

We’re moving fast.

  1. Investment

    Platform foundation

    • Founded by Lance Li and Xora Innovation
    • Validated proprietary wafer-scale TMD growth platform for high-quality 2D semiconductors
    • Established the core intellectual property and technology roadmap

  2. Build

    Lab to fab scaling

    • Advanced MOCVD platform from pilot to 100mm wafer scale
    • Expanded IP portfolio to cover TMD epitaxial growth, transfer processes, and device integration
    • Demonstrated reproducible wafer-scale growth with high uniformity and process stability

  3. Scale

    Commercial traction

    • Achieved commercial-grade TMD synthesis on 300mm wafers
    • Delivered wafer samples to industry partners within 18 months of launch
    • Raised US$15M in capital, including US$12M Seed round and US$3M non-dilutive funds
    • Established 7 active patent families including an issued US foundational patent
    • Expanded strategic collaborations with leading semiconductor manufacturers and research institutions

Team, Board & Advisors

Built with Semiconductor Industry Depth

Leadership

Board & Advisors

Technical Resources

Peer-reviewed results from material grown on Nexstrom systems